188betcambodia

産業技術総合研究所エレクトロニクス・製造領域 電子光基礎技術研究部門 Research Institute for Advanced Electronics and Photonics   お問い合わせ アクセス ENGLISH HOME 部門長あいさつ 部門概要 組織 研究グループ グループ一覧 先進プラズマプロセスグループ 先進レーザープロセスグループ 分子集積デバイスグループ 化合物半導体デバイスグループ 超伝導エレクトロニクスグループ 強相関エレクトロニクスグループ メゾスコピック材料グループ 研究成果 プレスリリース 展示パネル 論文・特許 イベント・講演会 人材募集 契約職員 研究職員 MENU HOME 部門長あいさつ 部門概要 組織 研究グループ グループ一覧 先進プラズマプロセスグループ 先進レーザープロセスグループ 分子集積デバイスグループ 化合物半導体デバイスグループ 超伝導エレクトロニクスグループ 強相関エレクトロニクスグループ メゾスコピック材料グループ 研究成果 プレスリリース 展示パネル 論文・特許 イベント・講演会 人材募集 契約職員 研究職員 産総研  > 組織 > 電子光基礎技術研究部門 > 光半導体デバイスグループ 研究グループ 光プロセス技術 先進プラズマプロセス 先進レーザープロセス 分子集積デバイス 新原理エレクトロニクス 化合物半導体デバイス 超伝導エレクトロニクス 強相関エレクトロニクス メゾスコピック材料 グループ概要 化合物半導体デバイスグループ 研究目標 高度な結晶成長技術、ナノ・マイクロレベルの微細加工プロセス技術、高性能回路設計技術、先端計測・評価技術等を融合して、新たな物理・量子効果を発現させる革新的な化合物半導体・有機半導体電子光デバイス開発を推進します。 グループHP 研究課題 1) 高信頼量子ドット型黄色半導体レーザの開発 BeZnCdSe量子井戸半導体レーザーの素子構造と室温連続発振特性 2) 電流注入型高指向性マイクロLEDの開発 GaN青色LEDの表面に形成された微小円錐台のSEM写真 微小円錐台のある試料と平坦表面試料との発光強度の比較 3) GaN電子デバイスを用いた小型・大電力（急速充電）ワイヤレス給電技術 GaNワイヤレス給電によるドローンTouch&Go 保有技術 III-V族、II-VI族化合物半導体のMBE結晶成長技術 III-V族化合物半導体のMOCVD結晶成長技術 半導体レーザー、発光ダイオード等の作製・評価技術 有機半導体薄膜の作製・評価技術 遅延発光、時間・空間分解フォトルミネセンスなどの材料物性評価技術 高速ワイヤレス給電技術、高性能小型電力変換回路 設備異常予兆分析技術 主要特許・論文 【2022】 T.Jinjyo et al., "Observation of Size-Dependent Optical Properties Based on Surface and Quantum Effects in Nanocrystals of 5,5'-Bis(4-Biphenylyl)-2,2'-Bithiophene", Adv.Photonics Res. 2100323 (2022). T.Matsuo et al., “Optically pumped lasing in a single crystal cavity of thiophene/phenylene co-oligomers grown via improved crystal growth methods in solution”, Appl.Phys.Express 15, 051002 (2022). N.Kumagai et al., “Comprehensive characterization of low-damaged GaN surface exposed to NH3 plasma toward plasma-induced metalorganic chemical vapor deposition”, Appl.Surf.Sci. 591, 153150 (2022). S.Gozu, “Photoluminescence of an InSb layer on a germanium substrate”, Semiconductor Science and Technology 37, 065002 (2022). H.Sakakita et al., “Ammonia-free epitaxy of single-crystal InN using a plasma-integrated gas-injection module”, Appl.Mat.Today 27, 101489 (2022). 鍛冶 他、「システムバランス変動予兆…」, 特願2022-061434 (2022). 【2021】 T.Ide et al., “Dynamic characteristics and device degradation of GaN-based vertical-cavity surface-emitting laser with an AlInN/GaN distributed Bragg reflector”, Jpn.J.Appl.Phys. 60，SBBE01 (2021). H.Mizuno et al., “Distributed feedback laser with methylammonium lead bromide embedded in channel-type waveguides”, Jpn.J.Appl.Phys. 60, SBBH11 (2021). N.Kokubo et al., “Analysis of Dislocations Line Tilts in GaN Single Crystal by Raman Spectroscopy”, Jpn.J.Appl.Phys. 60, SAAD03 (2021). H.Yamada et al., Appl.Phys.Lett. 118, 112101 (2021). R.Iida et al., “Large aperture GaN-based vertical-cavity surface-emitting lasers with nano-height cylindrical waveguide formed by BCl3 dry etching”, Appl.Phys.Express 14,012003 (2021). H.Mizuno et al., "Impact of material parameters on strong exciton–photon coupling states formed in microcrystal resonators of p- and n-type thiophene/phenylene co-oligomers", J.Mater.Chem.C 9, 11189 (2021). N.Kurahashi et al., "Micro-ring laser with CH3NH3PbBr3/PEO composite coated inside microcapillary", AIP Advances 11, 095301 (2021). S.Ando et al., “Impact of gate electrode formation process on Al2O3/GaN interface properties and channel mobility”, Appl.Phys.Express 14, 081001 (2021). Y.Ishikawa et al., “Generation of dislocations from scratches on GaN formed during wafer fabrication and dislocation reactions during homoepitaxial growth”, Jpn. J. Appl. Phys. 60, 115501 (2021). N.H.Trung et al., “Fabrication and analysis of InAlN/GaN metal–insulator–semiconductor high-electron-mobility transistors based on AlN/GaN superlattice channel”, Appl.Phys.Lett.119, 143503 (2021). Y.Miyake et al., “Synthesis of carbon nitride oligomer as a precursor of melon with improved fluorescence quantum yield”, Materials Advances 2, 6083 (2021). N.Kumagai et al., “Mobility and activation energy of lateral photocurrent of InAs quantum dot layers with ultra-fast carrier relaxation”, Physica E: Low-dimensional Systems and Nanostructures 126, 114478 (2021). M. Nagase et al., “Growth and Characterization of GaN-based Resonant Tunneling Diodes for High-Performance Nonvolatile Memory”, Physica Status Solidi A 218, 202000495 (2021). 井手、「ノイズ抑制回路、回路基板、及び電子機器」，110100310（台湾）、(2021). 秋本、「活性層・半導体発光素子及び活性層の製造方法」、特願2021-127353 (2021). 王 他、「窒素化合物の製造方法及び製造装置」、特願2021-166589 (2021). 山田、「化合物半導体基板」，特願2021—212419 (2021). 井手 他、「導線・コイル・トランス」，特願2021-073950 (2021). 【2020】 T.Ide et al., “Reduction of radiated emission from resonance coil in GaN wireless power transmission circuit by using Nd-Fe-N magnetic material”, AIP Advances 10,025121 (2020). M.Tsutsui et al., “A New DC Electric Field Sensor and Direct Measurements of Ionosphere Sq Electric Fields”, IEEJ Transactions on Electrical and Electronic Engineering, 15-9,1271 (2020). S.Dokiya et al., “Organic light-emitting diodes with a PIN structure of only thiophene/phenylene co-oligomer derivatives”, Jpn.J.Appl.Phys. 59, 41004 (2020). K.Iwai et al., Single-Crystalline Optical Microcavities from Luminescent Dendrimers”, ANGEWANDTE CHEMIE-INTERNATIONAL EDITION 59, 12674 (2020). T.Matsuo et al., “Synthesis and characterization of methoxy- or cyano-substituted thiophene/phenylene co-oligomers for lasing application”, RSC Advances10, 24057 (2020). H. Yamada et al., “Comparative study of boron precursors for CVD-grown h-BN thin films”, Phys. Status Solidi A, 2000241 (2020). P. Potisat et al., “Fabrication by vaporized film deposition and in situ FET measurements of polycrystalline thiophene/phenylene co-oligomer films”, Jpn.J.Appl.Phys. 59, SDDA17 (2020). R.Akimoto，” A comparative study of the operational characteristics of CdSe quantum dots and BeZnCdSe quantum well laser diodes”, J.Appl.Phys. 127，013101 (2020). J.Pan et al., “Double-Layer Cross-Coupled Silicon Nitride Multi-Ring Resonator Systems”, IEEE Photonics Technology Letters 32-5, 227 (2020). K.Mizuno et al., “Fabrication and characterization of vertical microcavities containing a submicron particle film of 5,5’-di(4-biphenylyl)-2,2’-bithiophene”, Jpn.J.Appl.Phys. 59, SDDA14 (2020). N.Kurahashi et al., “Whispering Gallery Mode Lasing from CH3NH3PbBr3/PEO Composites Grown in a Microcapillary”, Journal of Physical Chemistry C 124, 3242 (2020). Y.Hara et al., “A polymer film with ultra-broadband optical gain characteristics”, Appl.Phys.Lett. 116, 063301 (2020). M.Nagase et al., “Growth and Characterization of GaN-based Resonant Tunneling Diodes for High-Performance Nonvolatile Memory”, Physica Status Solidi A-Applications and Materials Science 2000495 (2020). 井手 他、「同期整流回路、電源装置、及び電子機器」，特願2020-000496 (2020). 井手、「ノイズ抑制回路、回路基板、及び電子機器」，特願2020-004268 (2020). 野村 他、「静電容量型センサ」, 特6775800 (2020). 井手 他、「ノイズ抑制回路、回路基板、及び電子機器」，特願2020-192733 (2020). 井手、「ノイズ抑制回路、回路基板、及び電子機器」， PCT/JP2020/044991（WIPO）(2020). 井手 他、「同期整流回路、電源装置、及び電子機器」， PCT/JP2020/047592（WIPO）(2020). 【2019】 T.Ide et al., “NdxFe1-xNy Magnetic Core Application for Resonance Coil of 13.56 MHz GaN Wireless Power Transmission”, IEEE Transactions on Magnetics 2801605 (2019). T.Kamei et al., “Research Toward Heterogeneously Integrated InGaN Laser on Silicon”, Physica Status Solidi A 1900770 (2019). M.Nagase et al., “Switching characteristics of nonvolatile memory using GaN/AlN resonant tunneling diodes”, Jpn.J.Appl.Phys. 58, 091001 (2019). S.Zhai et al., “Dual-Layer Cross-Coupled Tunable Resonator System in a Three-Dimensional Si3N4 Photonic Integration Platform”, J.Lightwave Tech. 37-13，3298 (2019). F.Sasaki et al., “Electroluminescence from double heterostructures of perovskite semiconductors and thiophene/phenylene co-oligomers”, Jpn.J.Appl.Phys. 59, SDDC01 (2019). H.Yanagi et al., “Cooperative Behaviors in Amplified Emission from Single Microcrystals of Thiophene/Phenylene Co-Oligomers toward Organic Polariton Laser”, Advanced Optical Materials 7-17, 1900136 (2019). S.Dokiya et al., “Strong exciton-photon coupling in organic microcavity electroluminescence devices with thiophene/phenylene co-oligomer derivatives”, Applied Physics Express 12, 111002 (2019). T.Akasawa et al., “Fabrication of low-dimensional microstructures with distyrylbenzene derivatives”, Jpn.J.Appl.Phys. 59, SDDA07 (2019). T.Matsuo et al., “Indication of cooperative light amplification in 5,5”-bis(4-biphenylyl)-2,2’:5,2”-terthiophene single crystals at room temperature”, Jpn.J.Appl.Phys. 59, SDDB02 (2019). M.Era et.al., “Squeezed-Out Technique to Prepare High-Quality PbBr-Based Layered Perovskite Langmuir-Blodgett Films Applicable to Cavity Polariton Devices”, Langmuir 37, 12224 (2019). H.Tachibana et al., “Highly concentrated dispersion of methyl-terminated germanane by liquid exfoliation”, Jpn.J.Appl.Phys. 58, 105002 (2019). H.Tachibana et al., “Liquid exfoliation of ethyl-terminated layered germanane”, Jpn.J.Appl.Phys. 58, SIIB21 (2019). H.Tachibana et al., “Hole transport dithiophene-benzene copolymer for electroluminescence devices”, Jpn.J.Appl.Phys. 59, SCCA01 (2019). X.Sun et al., “Silicon nitride based polarization-independent 4 x 4 optical matrix switch”, OPTICS AND LASER TECHNOLOGY 119, 105641 (2019). H.Yamada et al.,　“Reduction in residual impurities in semi-polar (3 0 (3)over-bar (1)over-bar) and (2 0 (2)over-bar (1)over-bar) GaN grown by metalorganic vapor phase epitaxy”, J.Cryst.Growth 512，119 (2019). H.Yamada et al., “Chemical Vapor Deposition Growth of BN Thin Films using B2H6 and NH3”, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS，1900318 (2019). H.Yamada et al., “Growth Temperature Effects of Chemical Vapor Deposition-Grown Boron Nitride Layer Using B2H6 and NH3”, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS 1900521 (2019). F.Sasaki et al., “Optically pumped lasing of cyano-substituted thiophene/phenylene co-oligomer microcrystals fabricated by the slide boat method“, Jpn.J.Appl.Phys. 58-SB, SBBG05 (2019). N.Kumagai et al., “Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs“, J.Crystal Growth 507, 437 (2019). N.Kumagai et al., “Effects of N2 and NH3 plasma exposure on the surface topography of p-GaN under quasi-atmospheric pressure“, Surfaces and Interfaces 14, 92 (2019). 中西 他、「半導体デバイス測定方法、半導体デバイス測定装置、およびプログラム」，特願2019-148022 (2019). 永瀬 他、「共鳴トンネルダイオード素子」，特6529051 (2019). 【2018】 R.Akimoto et al., “Vertically Coupled Suspended Silicon Nitride Microdisk Based Optical Sensor”, IEEE Photonics Technology Letters 30, 1507 (2018). S.Zhai et al., “Vertically integrated waveguide self-coupled resonator based tunable optical filter”, Optics Letters 43, 3766 (2018). Y.Higase et al., “High-gain and wide-band optical amplifications induced by a coupled excited state of organic dye molecules co-doped in polymer waveguide“, Optics Letters 43, 1714 (2018). V.C.Nguyen et al., “Single-crystal perovskite CH3NH3PbBr3 prepared by cast capping method for light-emitting diodes”, Jpn.J.Appl.Phys. 57, 04FL10 (2018). K.Bando et al., “Self‐Assembled Organic Crystalline Microring Cavities with High Q‐Factors”, Chem.Nano Mater. 4 936 (2018). D.Okada et al., “π-Electronic Co-crystal Microcavities with Selective Vibronic-Mode Light Amplification: Toward Forster Resonance Energy Transfer Lasing”, Nano Letters 18, 4396 (2018). X.Wang et al., “High‐Efficiency, High‐Power AlGaInP Thin‐Film LEDs with Micron‐Sized Truncated Cones as Light‐Extraction Structures”, Phys.Status Solidi A, 1700562 (2018). M.Nagase et al., “Stabilization of Nonvolatile Memory Operation Using GaN/AlN Resonant Tunneling Diodes by Reduction in Structural Inhomogeneity”, Jpn.J.Appl.Phys. 57, 070310 (2018). N.Kurahashi et al., “Whispering gallery mode lasing in lead halide perovskite crystals grown in microcapillary”, Appl.Phys.Lett. 113, 011107 (2018). S.Gozu et al., “Highly strained InAlP/InGaAs- based coupled double quantum wells on InP substrates”, Jpn.J.Appl.Phys. 57, 055501 (2018). X.Shen et al., “Impact of strain state on the ultrathin AlN/GaN superlattice growth on Si(110) substrates by metalorganic chemical vapor deposition”, Jpn.J.Appl.Phys. 57, 010306 (2018). R.Akimoto, “Recombination-Enhanced Effect in Green/Yellow Luminescence from BeZnCdSe Quantum Wells Grown by Molecular Beam Epitaxy”, J.Electron.Mater. (2018), https://doi.org/10.1007/s11664-018-6090-3. V-C.Nguyen et al., “Single-crystal perovskite CH3NH3PbBr3 prepared by cast capping method for light-emitting diodes”, Jpn.J.Appl.Phys. 57, 04FL10 (2018). 鍛冶 他、「電磁波抑制装置と電磁波抑制方法」、特願2018-114550 (2018). 【2017】 J.Feng et al., “Three-dimensional cross-coupled silicon nitride racetrack resonator-based tunable optical filter”，IEEE Photonics Technology Letters 29, 771 (2017). F.Sasaki et al., “Optically pumped lasing and electroluminescence of formamidinium perovskite semiconductors prepared by the cast-capping method”, Jpn.J.Appl.Phys. 57, 03EH05 (2017). S.Kushida et al., “Low-Threshold Whispering Gallery Mode Lasing from Self-Assembled Microspheres of Single-Sort Conjugated Polymers”, Advanced Optical Materials 5, 1700123 (2017). V-C. Nguyen et al., “Single-crystal perovskites prepared by simple solution process: Cast-capping method”, Journal of Crystal Growth 468, 796 (2017). S.Dokiya et al., “Fabrication of polycrystalline films of cyano-substituted thiophene/phenylene co-oligomer by vaporized film deposition method”, Journal of Crystal Growth 468, 792 (2017). K.Torii et al., “Organic Nanowire Lasers with Epitaxially Grown Crystals of Semiconducting Oligomers”, Chem.Nano.Mater. 3, 625 (2017). N.Takada et al., “Thermoluminescence of coral skeletons: a high-sensitivity proxy of diagenetic alteration of aragonite”, Scientific Reports 7, 17969 (2017). T.Miyamae et al., “Direct probing of charge carrier behavior in multilayered organic light-emitting diode devices by time-resolved electric-field-induced sum-frequency generation spectroscopy”, Appl.Phys.Express 10, 12101 (2017). 【～2016】 M. Nagase, et al., "Resistance switching memory operation using the bistability in current-voltage characteristics of GaN/AlN resonant tunneling diodes", JAP.J.Appl.Phys., 55(10), 1003011 (2016). J. V. Gonzalez-Fernandez, et al., "Residual electric fields of InGaAs/AlAs/AlAsSb (001) coupled double quantum wells structures assessed by photoreflectance anisotropy", Int.J.Modern Phys.B, 30, 1550248 (2016). J. Feng, et al., "BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation", Appl.Phys.Lett., 107(16), 161101-1 (2015). G. Wang, et al., "Controlling the directionality of spontaneous emission by evanescent wave coupling", Appl.Phys.Lett., 107(13), 131112-1 (2015). ＜表彰・プレスリリース・その他＞ 2020 JEM Best Paper Award, 秋本良一, Journal of Electronic Materials (JEM), August 2018 POSTER AWARD, 井手利英, 第80回応用物理学会秋季学術講演会, 「GaN-WPTにおけるNd-Fe-N付コイルによる放射電磁界の抑制」 Top Downloaded Paper Award, 亀井利浩, Physica Status Solidi A, 1900770 (2019)． 「窒化物半導体薄膜結晶を作製するための新手法を開発～窒素プラズマを供給して世界最高品質を実現～」プレスリリース　2022/4/27　(王・熊谷・山田 他).