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International Affairs Students Current Students Alumni Faculty/Staff Careers--> TOHOKU UNIVERSITYCREATING GLOBAL EXCELLENCE Search 日本語 Contact Tohoku University --> About Facts & Figures Facilities Organization Chart History President's Message Top Global University Project Designated National University Global Network Promotional Videos Academics Undergraduate Graduate Courses in English Exchange Programs Summer Programs Double Degree Programs Academic Calendar Syllabus Admissions Undergraduate Admissions Graduate Admissions Fees and Expenses Financial Aid Research Feature Highlights Research Releases University Research News Research Institutes Visitor Research Center Research Profiles Academic Research Staff Campus Life International Support Office IT Services Facilities Dining & Shops Campus Bus Clubs & Circles News University News Research--> Arts & Culture Health & Sports Campus & Community Press Release--> International Visit Alumni Careers Events Exhibits Music Special Event Lecture Alumni--> Map & Directions Campus Maps & Bus--> Facilities Map--> TOHOKUUNIVERSITY About Academics Admissions Research Campus Life News Events International Affairs Students Current Students Alumni Faculty/Staff Promotional Videos Subscribe to our Newsletter Map & Directions Contact Jobs & Vacancies Emergency Information Site Map 日本語 Close Home Research News Topological Materials Open a New Pathway for Exploring Spin Hall Materials Research News Topological Materials Open a New Pathway for Exploring Spin Hall Materials 2023-09-21 A group of researchers have made a significant breakthrough which could revolutionize next-generation electronics by enabling non-volatility, large-scale integration, low power consumption, high speed, and high reliability in spintronic devices. Details of their findings were published in the journal Physical Review B on August 25, 2023. Spintronic devices, represented by magnetic random access memory (MRAM), utilize the magnetization direction of ferromagnetic materials for information storage and rely on spin current, a flow of spin angular momentum, for reading and writing data. Conventional semiconductor electronics have faced limitations in achieving these qualities. However, the emergence of three-terminal spintronic devices, which employ separate current paths for writing and reading information, presents a solution with reduced writing errors and increased writing speed. Nevertheless, the challenge of reducing energy consumption during information writing, specifically magnetization switching, remains a critical concern. A promising method for mitigating energy consumption during information writing is the utilization of the spin Hall effect, where spin angular momentum (spin current) flows transversely to the electric current. The challenge lies in identifying materials that exhibit a significant spin Hall effect, a task that has been clouded by a lack of clear guidelines. A schematic image of conversion phenomenon from charge current to spin current based on spin Hall effect in Co3Sn2S2 layer. ©Takeshi Seki et al. "We turned our attention to a unique compound known as cobalt-tin-sulfur (Co3Sn2S2), which exhibits ferromagnetic properties at low temperatures below 177 K (-96 °C) and paramagnetic behavior at room temperature," explains Yong-Chang Lau and Takeshi Seki, both from the Institute for Materials Research (IMR), Tohoku University and co-authors of the study. "Notably, Co3Sn2S2 is classified as a topological material and exhibits a remarkable anomalous Hall effect when it transitions to a ferromagnetic state due to its distinctive electronic structure." Lau, Seki and colleagues employed theoretical calculations to explore the electronic states of both ferromagnetic and paramagnetic Co3Sn2S2, revealing that electron-doping enhances the spin Hall effect. To validate this theoretical prediction, thin films of Co3Sn2S2 partially substituted with nickel (Ni) and indium (In) were synthesized. These experiments demonstrated that Co3Sn2S2 exhibited the most significant anomalous Hall effect, while (Co2Ni)Sn2S2 displayed the most substantial spin Hall effect, aligning closely with the theoretical predictions. "We uncovered the intricate correlation between the Hall effects, providing a clear path to discovering new spin Hall materials by leveraging existing literature as a guide," adds Seki. "This will hopefully accelerate the development of ultralow-power-consumption spintronic devices, marking a pivotal step toward the future of electronics." Publication Details: Title: Intercorrelated anomalous Hall and spin Hall effect in kagome-lattice Co3Sn2S2-based shandite filmsAuthors: Yong-Chang Lau, Junya Ikeda, Kohei Fujiwara, Akihiro Ozawa, Jiaxin Zheng, Takeshi Seki, Kentaro Nomura, Liang Du, Quansheng Wu, Atsushi Tsukazaki, and Koki TakanashiJournal: Physical Review BDOI: 10.1103/PhysRevB.108.064429 Press release in Japanese Contact: Takeshi Seki,Institute for Materials ResearchEmail: takeshi.sekitohoku.ac.jpWebsite: http://magmatelab.imr.tohoku.ac.jp/index.html --> Archives 2014&＃24180; 2015&＃24180; 2016&＃24180; 2017&＃24180; 2018&＃24180; 2019&＃24180; 2020&＃24180; 2021&＃24180; 2022&＃24180; 2023&＃24180; Page Top About Tohoku University Academics Admissions Research Campus Life News Events International Affairs Students Alumni Promotional Videos Subscribe to our Newsletter Map & Directions Contact Tohoku University Jobs & Vacancies Emergency Information Site Map Media Enquiries Parent & Family Support Public Facilities Contact Tohoku University